29. 11. 2012. Seminar: Pablo Stoliar

Thursday 29 November 2012 at 1PM
IPB Library

Dr. Pablo Stoliar
Université de Paris-Sud, Orsay, France

Resistive Switching

Abstract:
Resistive switching (RS) is becoming one of the promising candidates to substitute the standard memory technologies in a near future. It is also getting attention in the field of bio-inspired neuromorphic systems. RS -the physical effect behind the memristive phenomena- refers to the reversible change of the resistance of a nanometric-sized media by the application of electrical pulses (see http://www.scholarpedia.org/article/Resistive_switching). In this talk we will first introduce the RS topic, describing its physics, presenting some applications and discussing its relevance. Then, we will present our work, that let us understand the mechanisms behind RS in a specific family of narrow band Mott insulators.